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| SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=120V. Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). A L KTC3911S EPITAXIAL PLANAR NPN TRANSISTOR E B L Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTA1517S. G High hFE: hFE=200 700. 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 120 120 5 100 20 150 150 -55 150 UNIT V V V mA mA mW K M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Type Name Lot No. AD ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification GR(G):200 400 SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10k MIN. 200 TYP. 100 4.0 1.0 MAX. 0.1 0.1 700 0.3 10 V MHz pF dB UNIT A A BL(L):350 700 2001. 2. 24 Revision No : 3 J D 1/3 KTC3911S I C - V CE 4 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE COMMON EMITTER Ta=25 C 10 9 8 7 6 5 4 3 2 I B =1A 0 h FE - I C 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 3 2 100 50 30 COMMON EMITTER V CE =6V 1 0 10 10 0.3 1 3 10 30 100 400 COLLECTOR CURRENT I C (mA) 0 2 4 6 8 COLLECTOR EMITTER VOLTAGE V CE (V) VCE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /I B =10 I C - VBE 200 160 120 Ta=1 00 C COMMON EMITTER VCE =6V 0.1 0.05 0.03 80 40 0 0 0.2 0.4 25 -25 0.01 0.3 1 3 10 30 100 400 0.6 Ta=25 C Ta=-25 C Ta=100 C 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 50 30 f=1MHz I E =0 Ta=25 C h PARAMETER - V CE 500 300 h fe 100 h PARAMETER 30 10 5 3 COMMON EMITTER I E =-1mA f=270Hz Ta=25 C h ie (xk) h re (x10 -5) h oe (x ) 10 3 1 0 10 20 30 40 50 60 70 80 1 1 3 10 COLLECTOR-BASE VOLTAGE V CB (V) 30 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 2. 24 Revision No : 3 2/3 KTC3911S h PARAMETER - I E 1k 500 300 h PARAMETER 100 50 30 10 5 3 1 -10 SIGNAL SOURCE RESISTANCE R g () COMMON EMITTER VCE =6V f=270Hz NF - R g , I C 100k COMMON EMITTER VCE =6V 12 f=10Hz 10 8 NF NF =1d h fe 10k h h re ie =1 (x dB 4 6 (x 1 k ) ) 2 3 0 -5 1k B 2 3 h oe (x ) 100 10 12 8 6 4 -50 -100 -300 EMITTER CURRENT I E (A) NF - R g , I C SIGNAL SOURCE RESISTANCE R g () 100k COMMON EMITTER VCE =6V f=1kHz COLLECTOR POWER DISSIPATION PC (mW) 10k 1k NF 4 6 10 12 3 =1 d 2B 100 8 10 10 100 1k 10k COLLECTOR CURRENT I C (A) 2001. 2. 24 Revision No : 3 -1000 -3000 -10000 10 10 100 1k 10k COLLECTOR CURRENT I C (A) 12 10 8 6 4 P C - Ta 400 NF 3 =1 dB 2 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 3/3 |
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